Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors
Fabricating lateral graphene p–n junctions with controlled doping levels is instrumental to realize ultrafast and efficient optoelectronic devices. Here, the authors report a seamless graphene based photodetector doped by selective ion implantation and in-situ chemical vapour deposition.
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Nature Publishing Group
2018-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-018-07555-6 |
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doaj-55da7a3c9970484d8537216696b422f02021-05-11T10:05:04ZengNature Publishing GroupNature Communications2041-17232018-12-01911910.1038/s41467-018-07555-6Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectorsGang Wang0Miao Zhang1Da Chen2Qinglei Guo3Xuefei Feng4Tianchao Niu5Xiaosong Liu6Ang Li7Jiawei Lai8Dong Sun9Zhimin Liao10Yongqiang Wang11Paul K. Chu12Guqiao Ding13Xiaoming Xie14Zengfeng Di15Xi Wang16State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesInternational Center for Quantum Materials, School of Physics, Peking UniversityInternational Center for Quantum Materials, School of Physics, Peking UniversityState Key Laboratory for Mesoscopic Physics, School of Physics, Peking UniversityMaterials Science and Technology Division, Los Alamos National LaboratoryDepartment of Physics and Department of Materials Science and Engineering, City University of Hong KongState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesFabricating lateral graphene p–n junctions with controlled doping levels is instrumental to realize ultrafast and efficient optoelectronic devices. Here, the authors report a seamless graphene based photodetector doped by selective ion implantation and in-situ chemical vapour deposition.https://doi.org/10.1038/s41467-018-07555-6 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Gang Wang Miao Zhang Da Chen Qinglei Guo Xuefei Feng Tianchao Niu Xiaosong Liu Ang Li Jiawei Lai Dong Sun Zhimin Liao Yongqiang Wang Paul K. Chu Guqiao Ding Xiaoming Xie Zengfeng Di Xi Wang |
| spellingShingle |
Gang Wang Miao Zhang Da Chen Qinglei Guo Xuefei Feng Tianchao Niu Xiaosong Liu Ang Li Jiawei Lai Dong Sun Zhimin Liao Yongqiang Wang Paul K. Chu Guqiao Ding Xiaoming Xie Zengfeng Di Xi Wang Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors Nature Communications |
| author_facet |
Gang Wang Miao Zhang Da Chen Qinglei Guo Xuefei Feng Tianchao Niu Xiaosong Liu Ang Li Jiawei Lai Dong Sun Zhimin Liao Yongqiang Wang Paul K. Chu Guqiao Ding Xiaoming Xie Zengfeng Di Xi Wang |
| author_sort |
Gang Wang |
| title |
Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors |
| title_short |
Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors |
| title_full |
Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors |
| title_fullStr |
Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors |
| title_full_unstemmed |
Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors |
| title_sort |
seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors |
| publisher |
Nature Publishing Group |
| series |
Nature Communications |
| issn |
2041-1723 |
| publishDate |
2018-12-01 |
| description |
Fabricating lateral graphene p–n junctions with controlled doping levels is instrumental to realize ultrafast and efficient optoelectronic devices. Here, the authors report a seamless graphene based photodetector doped by selective ion implantation and in-situ chemical vapour deposition. |
| url |
https://doi.org/10.1038/s41467-018-07555-6 |
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