Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

Fabricating lateral graphene p–n junctions with controlled doping levels is instrumental to realize ultrafast and efficient optoelectronic devices. Here, the authors report a seamless graphene based photodetector doped by selective ion implantation and in-situ chemical vapour deposition.

Bibliographic Details
Main Authors: Gang Wang, Miao Zhang, Da Chen, Qinglei Guo, Xuefei Feng, Tianchao Niu, Xiaosong Liu, Ang Li, Jiawei Lai, Dong Sun, Zhimin Liao, Yongqiang Wang, Paul K. Chu, Guqiao Ding, Xiaoming Xie, Zengfeng Di, Xi Wang
Format: Article
Language:English
Published: Nature Publishing Group 2018-12-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-018-07555-6

Internet

https://doi.org/10.1038/s41467-018-07555-6

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