Simulation of III-V Material Based Steep Slope Tunnel FET for RF Harvester Application
Due to the limitation of Sub-threshold Swing (SS) of 60 mV/dec in CMOS, alternately Tunnel FETs (TFETs) are more attractive in recent years since it has high energy efficiency and better switching performance even at a reduced voltage level. Because it has the benefits of Band to Band Tunneling (BTB...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taiwan Association of Engineering and Technology Innovation
2019-05-01
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| Series: | International Journal of Engineering and Technology Innovation |
| Subjects: | |
| Online Access: | http://ojs.imeti.org/index.php/IJETI/article/view/2954 |