Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique
We deposited 300-nm-thick GaN films on an amorphous glass substrate at a substrate temperature of 300 °C by using pulsed direct current (DC) sputtering. A ZnO buffer layer was utilized to improve the crystalline quality of the GaN films. Scanning electron microscopy results showed that the...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-06-01
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| Series: | Coatings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-6412/9/7/419 |