Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

• Main Authors: Yu Lan, Li-Xin Xia, Tao Huang, Weiping Xu, Gui-Fang Huang, Wangyu Hu, Wei-Qing Huang
• Format: Article
• Language: English
• Published: SpringerOpen 2020-09-01
• Series: Nanoscale Research Letters
• Subjects: Schottky barrier; Graphene-MoTe2 heterostructure; External electric field; Strain; First-principles calculations
• Online Access: http://link.springer.com/article/10.1186/s11671-020-03409-7

Abstract Two-dimensional (2D) transition metal dichalcogenides with intrinsically passivated surfaces are promising candidates for ultrathin optoelectronic devices that their performance is strongly affected by the contact with the metallic electrodes. Herein, first-principle calculations are used to construct and investigate the electronic and interfacial properties of 2D MoTe2 in contact with a graphene electrode by taking full advantage of them. The obtained results reveal that the electronic properties of graphene and MoTe2 layers are well preserved in heterostructures due to the weak van der Waals interlayer interaction, and the Fermi level moves toward the conduction band minimum of MoTe2 layer thus forming an n type Schottky contact at the interface. More interestingly, the Schottky barrier height and contact types in the graphene-MoTe2 heterostructure can be effectively tuned by biaxial strain and external electric field, which can transform the heterostructure from an n type Schottky contact to a p type one or to Ohmic contact. This work provides a deeper insight look for tuning the contact types and effective strategies to design high performance MoTe2-based Schottky electronic nanodevices.