Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

Abstract Two-dimensional (2D) transition metal dichalcogenides with intrinsically passivated surfaces are promising candidates for ultrathin optoelectronic devices that their performance is strongly affected by the contact with the metallic electrodes. Herein, first-principle calculations are used t...

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Bibliographic Details
Main Authors: Yu Lan, Li-Xin Xia, Tao Huang, Weiping Xu, Gui-Fang Huang, Wangyu Hu, Wei-Qing Huang
Format: Article
Language:English
Published: SpringerOpen 2020-09-01
Series:Nanoscale Research Letters
Subjects:
Schottky barrier
Graphene-MoTe2 heterostructure
External electric field
Strain
First-principles calculations
Online Access:http://link.springer.com/article/10.1186/s11671-020-03409-7

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http://link.springer.com/article/10.1186/s11671-020-03409-7

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