Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set Pulse
In this paper, the resistive switching characteristics in a Ti/HfO<sub>2</sub>: Al/Pt sandwiched structure are investigated for gradual conductance tuning inherent functions. The variation in conductance of the device under different amplitudes and voltage pulse widths is studied. At the...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-03-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/6/731 |