Current collapse scaling in GaN/AlGaN/SiC high electron mobility transistors

Current collapse scaling in GaN/AlGaN/SiC high electron mobility transistors

This study reports the scaling of current collapse in GaN/AlGaN HEMTs with respect to the un-passivated gate drain distance on the gate edge. The source drain current reduction increased from 4 mA to 28 mA, when un-passivated gap increased from 200 nm to 600 nm respectively mainly due to virtual gat...

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Bibliographic Details
Main Authors:	D.S. Rawal, Amit, Sunil Sharma, Sonalee Kapoor, Robert Laishram, Seema Vinayak
Format:	Article
Language:	English
Published:	KeAi Communications Co., Ltd. 2019-01-01
Series:	Solid State Electronics Letters
Online Access:	http://www.sciencedirect.com/science/article/pii/S2589208819300043

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