Current collapse scaling in GaN/AlGaN/SiC high electron mobility transistors
This study reports the scaling of current collapse in GaN/AlGaN HEMTs with respect to the un-passivated gate drain distance on the gate edge. The source drain current reduction increased from 4 mA to 28 mA, when un-passivated gap increased from 200 nm to 600 nm respectively mainly due to virtual gat...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
KeAi Communications Co., Ltd.
2019-01-01
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| Series: | Solid State Electronics Letters |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589208819300043 |