Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Gallium arsenide nanowires were grown on silicon (100) substrates by what is called the vapor-liquid-solid (VLS) growth mechanism using a molecular beam epitaxy (MBE) system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing g...

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Bibliographic Details
Main Authors: Ramon M. delos Santos, Jasher John A. Ibañes, Joel G. Fernando, Rafael B. Jaculbia, Jorge Michael M. Presto, Michael J. Defensor, Michelle B. Somintac, Paul Concepcion, Arnel A. Salvador, Armando Somintac
Format: Article
Language:English
Published: University of the Philippines 2008-06-01
Series:Science Diliman
Subjects:
Gallium arsenide nanowires
nanowires
Online Access:http://journals.upd.edu.ph/index.php/sciencediliman/article/view/1137

Internet

http://journals.upd.edu.ph/index.php/sciencediliman/article/view/1137

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