Low Power and Ultrafast Multi-State Switching in nc-Al Induced Al<sub>2</sub>O<sub>3</sub>/Al<sub>x</sub>O<sub>y</sub> Bilayer Thin Film RRAM Device

Low Power and Ultrafast Multi-State Switching in nc-Al Induced Al<sub>2</sub>O<sub>3</sub>/Al<sub>x</sub>O<sub>y</sub> Bilayer Thin Film RRAM Device

Low power and ultrafast multi-state storage resistive switching memory (RRAM) device had been developed based on Al/Al<sub>2</sub>O<sub>3</sub>/AlxOy/Al structure. Both of Al<sub>2</sub>O<sub>3</sub> and Al nanocrystal (nc-Al) induced AlxOy thin films...

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Bibliographic Details
Main Authors: Wei Zhu, Jie Li, Xiaobo Xu, Lin Zhang, Yi Zhao
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Multi-state switching
nc-Al
RRAM
Online Access:https://ieeexplore.ieee.org/document/8957154/

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