Low Power and Ultrafast Multi-State Switching in nc-Al Induced Al<sub>2</sub>O<sub>3</sub>/Al<sub>x</sub>O<sub>y</sub> Bilayer Thin Film RRAM Device
Low power and ultrafast multi-state storage resistive switching memory (RRAM) device had been developed based on Al/Al<sub>2</sub>O<sub>3</sub>/AlxOy/Al structure. Both of Al<sub>2</sub>O<sub>3</sub> and Al nanocrystal (nc-Al) induced AlxOy thin films...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8957154/ |