Design of a full 1Mb STT-MRAM based on advanced FDSOI technology
In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current in integrated circuits. In the other hand, modern portable devices first concern is power-efficiency to insure a better autonomy. Thus, new device technologies and computing strategies are required in...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2017-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | https://doi.org/10.1051/matecconf/201712501003 |