Impact of Long-Term Annealing on Photoluminescence from Ge<sub>1−x</sub>Sn<sub>x</sub> Alloys

Impact of Long-Term Annealing on Photoluminescence from Ge<sub>1−x</sub>Sn<sub>x</sub> Alloys

We report on the connection between strain, composition, defect density and the photoluminescence observed before and after annealing at 300 °C for GeSn samples with Sn content of 8% to 10%. Results show how the composition and level of strain influenced the separation between the indirect and direc...

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Bibliographic Details
Main Authors: Oluwatobi Olorunsola, Hryhorii Stanchu, Solomon Ojo, Krishna Pandey, Abdulla Said, Joe Margetis, John Tolle, Andrian Kuchuk, Yuriy I. Mazur, Gregory Salamo, Shui-Qing Yu
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Crystals
Subjects:
germanium tin
annealing
direct and indirect optical transition
strain engineering
Online Access:https://www.mdpi.com/2073-4352/11/8/905

Internet

https://www.mdpi.com/2073-4352/11/8/905

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