A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier

A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier

A complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the SRS process is ve...

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Bibliographic Details
Main Authors: De Xing Lioe, Kamel Mars, Shoji Kawahito, Keita Yasutomi, Keiichiro Kagawa, Takahiro Yamada, Mamoru Hashimoto
Format: Article
Language:English
Published: MDPI AG 2016-04-01
Series:Sensors
Subjects:
stimulated Raman scattering
CMOS image sensor
lock-in amplifier
low frequency noise
double modulation
Raman shift
Online Access:http://www.mdpi.com/1424-8220/16/4/532

Internet

http://www.mdpi.com/1424-8220/16/4/532

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