Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate

Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. The as-deposited LTE-AlN MISHEMT sho...

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Bibliographic Details
Main Authors: Matthew Whiteside, Subramaniam Arulkumaran, Yilmaz Dikme, Abhinay Sandupatla, Geok Ing Ng
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Electronics
Subjects:
LTE
AlN
AlGaN/GaN
interface state density
conductance-frequency
MISHEMT
Online Access:https://www.mdpi.com/2079-9292/9/11/1858

Internet

https://www.mdpi.com/2079-9292/9/11/1858

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