On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors
The SOI symmetric lateral bipolar transistor is uniquely suitable for operation at high injection currents where the injected minority carrier density in the base region is larger than the base doping concentration. Transistors operating in high-injection can achieve record-high drive currents on th...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2014-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/6837451/ |