EFFECT OF VARYING TEMPERATURE ON GAAS-MESFET ELECTRICAL PARAMETERS
The present paper introduces a simulation model for the drain-current (I-V) characteristics of a submicron GaAs MESFET. This simulation takes into account different electrical and physical parameters as well as the charge distribution in the device active region. In addition, the simulation incl...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
ICT Academy of Tamil Nadu
2019-01-01
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| Series: | ICTACT Journal on Microelectronics |
| Subjects: | |
| Online Access: | http://ictactjournals.in/paper/IJME_Vol_4_Iss_4_Paper_8_705_709.pdf |