High-κ Dielectric on ReS<sub>2</sub>: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub>

High-κ Dielectric on ReS<sub>2</sub>: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub>

We report an excellent growth behavior of a high-&#954; dielectric on ReS<sub>2</sub>, a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al<sub>2</sub>O<sub>3</sub> thin film on the UV-Ozone pretreated surfac...

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Bibliographic Details
Main Authors: Ava Khosravi, Rafik Addou, Massimo Catalano, Jiyoung Kim, Robert M. Wallace
Format: Article
Language:English
Published: MDPI AG 2019-03-01
Series:Materials
Subjects:
rhenium sulfide
atomic layer deposition
plasma-enhanced atomic layer deposition
X-ray photoelectron spectroscopy
Online Access:https://www.mdpi.com/1996-1944/12/7/1056

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https://www.mdpi.com/1996-1944/12/7/1056

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