Superconductivity in carrier-doped silicon carbide
We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity with Tc=1.4 K. Both SiC:...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2008-01-01
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| Series: | Science and Technology of Advanced Materials |
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| Online Access: | http://dx.doi.org/10.1088/1468-6996/9/4/044204 |