Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

Nano-textured 4H–SiC homoepitaxial layers (NSiCLs) were grown on 4H–SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growt...

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Main Authors: Xingfang Liu, Yu Chen, Changzheng Sun, Min Guan, Yang Zhang, Feng Zhang, Guosheng Sun, Yiping Zeng
Format: Article
Language:English
Published: MDPI AG 2015-09-01
Series:Nanomaterials
Subjects:
nano-textured
4H–SiC
morphology
graphene
evolution
Online Access:http://www.mdpi.com/2079-4991/5/3/1532
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spelling doaj-506e3345ac9d42f78a74616e3571c3932020-11-24T22:41:32ZengMDPI AGNanomaterials2079-49912015-09-01531532154310.3390/nano5031532nano5031532Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene GrowthXingfang Liu0Yu Chen1Changzheng Sun2Min Guan3Yang Zhang4Feng Zhang5Guosheng Sun6Yiping Zeng7Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaSemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaTsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, ChinaNano-textured 4H–SiC homoepitaxial layers (NSiCLs) were grown on 4H–SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were about submicrons in-plane and about 100 nanometers out-of-plane in size. After HTTs under vacuum, pattern sizes reduced, and the sizes of the remains were inversely proportional to the treatment time. Referring to Raman spectra, the establishment of multi-layer graphene (MLG) on NSiCL surfaces was observed. MLG with sp2 disorders was obtained from NSiCLs after a high temperature treatment under vacuum at 1700 K for two hours, while MLG without sp2 disorders was obtained under Ar atmosphere at 1900 K.http://www.mdpi.com/2079-4991/5/3/1532nano-textured4H–SiCmorphologygrapheneevolution
collection DOAJ
language English
format Article
sources DOAJ
author Xingfang Liu
Yu Chen
Changzheng Sun
Min Guan
Yang Zhang
Feng Zhang
Guosheng Sun
Yiping Zeng
spellingShingle Xingfang Liu
Yu Chen
Changzheng Sun
Min Guan
Yang Zhang
Feng Zhang
Guosheng Sun
Yiping Zeng
Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth
Nanomaterials
nano-textured
4H–SiC
morphology
graphene
evolution
author_facet Xingfang Liu
Yu Chen
Changzheng Sun
Min Guan
Yang Zhang
Feng Zhang
Guosheng Sun
Yiping Zeng
author_sort Xingfang Liu
title Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth
title_short Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth
title_full Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth
title_fullStr Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth
title_full_unstemmed Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth
title_sort surface evolution of nano-textured 4h–sic homoepitaxial layers after high temperature treatments: morphology characterization and graphene growth
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2015-09-01
description Nano-textured 4H–SiC homoepitaxial layers (NSiCLs) were grown on 4H–SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were about submicrons in-plane and about 100 nanometers out-of-plane in size. After HTTs under vacuum, pattern sizes reduced, and the sizes of the remains were inversely proportional to the treatment time. Referring to Raman spectra, the establishment of multi-layer graphene (MLG) on NSiCL surfaces was observed. MLG with sp2 disorders was obtained from NSiCLs after a high temperature treatment under vacuum at 1700 K for two hours, while MLG without sp2 disorders was obtained under Ar atmosphere at 1900 K.
topic nano-textured
4H–SiC
morphology
graphene
evolution
url http://www.mdpi.com/2079-4991/5/3/1532
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