Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

Nano-textured 4H–SiC homoepitaxial layers (NSiCLs) were grown on 4H–SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growt...

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Bibliographic Details
Main Authors: Xingfang Liu, Yu Chen, Changzheng Sun, Min Guan, Yang Zhang, Feng Zhang, Guosheng Sun, Yiping Zeng
Format: Article
Language:English
Published: MDPI AG 2015-09-01
Series:Nanomaterials
Subjects:
nano-textured
4H–SiC
morphology
graphene
evolution
Online Access:http://www.mdpi.com/2079-4991/5/3/1532

Internet

http://www.mdpi.com/2079-4991/5/3/1532

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