Measuring the upset of CMOS and TTL due to HPM-signals
To measure the performance of electronic components when stressed by High Power Microwave signals a setup was designed and tested which allows a well-defined voltage signal to enter the component during normal operation, and to discriminate its effect on the component.</p><p style="...
Main Authors: | , |
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Format: | Article |
Language: | deu |
Published: |
Copernicus Publications
2004-01-01
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Series: | Advances in Radio Science |
Online Access: | http://www.adv-radio-sci.net/2/71/2004/ars-2-71-2004.pdf |