Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes

Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes

Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure. Keywords: PbTe, PbSnTe, Narrow band gap semiconductors, Negative resistance, Reverse bias, Deep le...

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Bibliographic Details
Main Authors: Arata Yasuda, Ken Suto, Jun-ichi Nishizawa
Format: Article
Language:English
Published: Elsevier 2016-01-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379716000085
Description
Summary:Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure. Keywords: PbTe, PbSnTe, Narrow band gap semiconductors, Negative resistance, Reverse bias, Deep levels
ISSN:2211-3797

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