Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes
Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure. Keywords: PbTe, PbSnTe, Narrow band gap semiconductors, Negative resistance, Reverse bias, Deep le...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2016-01-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379716000085 |