Transient photoreflectance of AlInN/GaN heterostructures
Time-resolved photoreflectance (PR) in AlInN/GaN heterostructures was applied to study carrier dynamics at energies extending from the uniform AlInN alloy band gap to the band gap of GaN. PR at the AlInN band gap has been found to have subpicosecond decay. Such ultrafast carrier relaxation from the...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-12-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4768670 |