Electrical and photoelectrical properties of MoN/n-Si surface-barrier structures
Subject and purpose. The subject of research is the electrical and photoelectric properties of the МoN/n-Si heterostructure fabricated for the first time by means of the deposition of thin film of molybdenum nitride (n-type conductivity) by the reactive magnetron sputtering onto single crystal subst...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Akademperiodyka
2019-06-01
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| Series: | Радиофизика и электроника |
| Subjects: | |
| Online Access: | http://re-journal.org.ua/sites/default/files/file_attach/2019-2/6.pdf |