Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications
Power consumption and I<sub>on</sub>/I<sub>off</sub> ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capac...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8102997/ |