Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides
Defect-carrier interaction in transition metal dichalcogenides (TMDs) plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated t...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5022339 |