Assembly Influence on the Small-Signal Parameters of a Packaged Transistor

A detailed analysis of the assembly influence on thesmall-signal parameters of a packaged transistor is presented. A newmethod, based on 3D field simulation and mixed-mode scatteringparameters approach is proposed. Differences in scattering parameterscaused by assembly change are computed using t...

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Main Authors: Z. Skvor, K. Hoffmann, P. Cerny, V. Sokol
Format: Article
Language:English
Published: Spolecnost pro radioelektronicke inzenyrstvi 2005-12-01
Series:Radioengineering
Online Access:http://www.radioeng.cz/fulltexts/2005/05_04_075_080.pdf
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spelling doaj-4d16aef033a84e619695d12351f9272f2020-11-24T23:44:11ZengSpolecnost pro radioelektronicke inzenyrstviRadioengineering1210-25122005-12-011447580Assembly Influence on the Small-Signal Parameters of a Packaged TransistorZ. SkvorK. HoffmannP. CernyV. SokolA detailed analysis of the assembly influence on thesmall-signal parameters of a packaged transistor is presented. A newmethod, based on 3D field simulation and mixed-mode scatteringparameters approach is proposed. Differences in scattering parameterscaused by assembly change are computed using the new proposed methodand compared to the standard method based on admittance matrix. Thedifferences, accuracy, error sources and suitability of both methodsare discussed. Results are verified experimentally in microstrip linefor two fundamental assembly changes of a transistor in SOT 343 packagein frequency range 45 MHz - 18 GHz.www.radioeng.cz/fulltexts/2005/05_04_075_080.pdf
collection DOAJ
language English
format Article
sources DOAJ
author Z. Skvor
K. Hoffmann
P. Cerny
V. Sokol
spellingShingle Z. Skvor
K. Hoffmann
P. Cerny
V. Sokol
Assembly Influence on the Small-Signal Parameters of a Packaged Transistor
Radioengineering
author_facet Z. Skvor
K. Hoffmann
P. Cerny
V. Sokol
author_sort Z. Skvor
title Assembly Influence on the Small-Signal Parameters of a Packaged Transistor
title_short Assembly Influence on the Small-Signal Parameters of a Packaged Transistor
title_full Assembly Influence on the Small-Signal Parameters of a Packaged Transistor
title_fullStr Assembly Influence on the Small-Signal Parameters of a Packaged Transistor
title_full_unstemmed Assembly Influence on the Small-Signal Parameters of a Packaged Transistor
title_sort assembly influence on the small-signal parameters of a packaged transistor
publisher Spolecnost pro radioelektronicke inzenyrstvi
series Radioengineering
issn 1210-2512
publishDate 2005-12-01
description A detailed analysis of the assembly influence on thesmall-signal parameters of a packaged transistor is presented. A newmethod, based on 3D field simulation and mixed-mode scatteringparameters approach is proposed. Differences in scattering parameterscaused by assembly change are computed using the new proposed methodand compared to the standard method based on admittance matrix. Thedifferences, accuracy, error sources and suitability of both methodsare discussed. Results are verified experimentally in microstrip linefor two fundamental assembly changes of a transistor in SOT 343 packagein frequency range 45 MHz - 18 GHz.
url http://www.radioeng.cz/fulltexts/2005/05_04_075_080.pdf
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AT khoffmann assemblyinfluenceonthesmallsignalparametersofapackagedtransistor
AT pcerny assemblyinfluenceonthesmallsignalparametersofapackagedtransistor
AT vsokol assemblyinfluenceonthesmallsignalparametersofapackagedtransistor
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