GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation

GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation

We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally undoped (100) GaAs1−yBiy to predict the 300K photoluminescence intensity and Bi composition (y) in GaAs1−yBiy. The LOPC mode is...

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Main Authors: Jincheng Li, Kamran Forghani, Yingxin Guan, Wenyuan Jiao, Wei Kong, Kristen Collar, Tong-Ho Kim, Thomas F. Kuech, April S. Brown
Format: Article
Language:English
Published: AIP Publishing LLC 2015-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4922139
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spelling doaj-4ce2b0b0dd424bb598a64102acd640fa2020-11-25T00:40:28ZengAIP Publishing LLCAIP Advances2158-32262015-06-0156067103067103-610.1063/1.4922139003506ADVGaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporationJincheng Li0Kamran Forghani1Yingxin Guan2Wenyuan Jiao3Wei Kong4Kristen Collar5Tong-Ho Kim6Thomas F. Kuech7April S. Brown8Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 USADepartment of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, WI 53706 USADepartment of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, WI 53706 USADepartment of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 USADepartment of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 USADepartment of Physics, Duke University, Durham, NC, 27708 USADepartment of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 USADepartment of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, WI 53706 USADepartment of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 USAWe report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally undoped (100) GaAs1−yBiy to predict the 300K photoluminescence intensity and Bi composition (y) in GaAs1−yBiy. The LOPC mode is used to calculate the hole concentration in GaAs1−yBiy epitaxial layers. A linear relationship between hole concentration and photoluminescence intensity is found for a range of samples grown at various temperatures and growth rates. In addition, the composition (y) of Bi in GaAs1−yBiy is also found to be linearly related to the GaAs Fröhlich scattering intensity.http://dx.doi.org/10.1063/1.4922139
collection DOAJ
language English
format Article
sources DOAJ
author Jincheng Li
Kamran Forghani
Yingxin Guan
Wenyuan Jiao
Wei Kong
Kristen Collar
Tong-Ho Kim
Thomas F. Kuech
April S. Brown
spellingShingle Jincheng Li
Kamran Forghani
Yingxin Guan
Wenyuan Jiao
Wei Kong
Kristen Collar
Tong-Ho Kim
Thomas F. Kuech
April S. Brown
GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation
AIP Advances
author_facet Jincheng Li
Kamran Forghani
Yingxin Guan
Wenyuan Jiao
Wei Kong
Kristen Collar
Tong-Ho Kim
Thomas F. Kuech
April S. Brown
author_sort Jincheng Li
title GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation
title_short GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation
title_full GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation
title_fullStr GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation
title_full_unstemmed GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation
title_sort gaas1−ybiy raman signatures: illuminating relationships between the electrical and optical properties of gaas1−ybiy and bi incorporation
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-06-01
description We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally undoped (100) GaAs1−yBiy to predict the 300K photoluminescence intensity and Bi composition (y) in GaAs1−yBiy. The LOPC mode is used to calculate the hole concentration in GaAs1−yBiy epitaxial layers. A linear relationship between hole concentration and photoluminescence intensity is found for a range of samples grown at various temperatures and growth rates. In addition, the composition (y) of Bi in GaAs1−yBiy is also found to be linearly related to the GaAs Fröhlich scattering intensity.
url http://dx.doi.org/10.1063/1.4922139
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