GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation

GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation

We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally undoped (100) GaAs1−yBiy to predict the 300K photoluminescence intensity and Bi composition (y) in GaAs1−yBiy. The LOPC mode is...

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Bibliographic Details
Main Authors: Jincheng Li, Kamran Forghani, Yingxin Guan, Wenyuan Jiao, Wei Kong, Kristen Collar, Tong-Ho Kim, Thomas F. Kuech, April S. Brown
Format: Article
Language:English
Published: AIP Publishing LLC 2015-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4922139

Internet

http://dx.doi.org/10.1063/1.4922139

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