High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2
Atomically thin layered tungsten diselenide (WSe2) has attracted tremendous research attention for its potential applications in next-generation electronics. This article reports the synthesis method of high-quality monolayer to trilayer WSe2 by molten-salt-assisted chemical vapor deposition. With t...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-07-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0048983 |