Investigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation

Abstract Nanoindentations of monocrystalline silicon are conducted to investigate the phase transformation process at a temperature range from 292 K to 210 K. The load-displacement curves are obtained and the residual indents are detected by Raman spectra. MD simulations are also conducted to identi...

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Bibliographic Details
Main Authors: Shunbo Wang, Hang Liu, Lixia Xu, Xiancheng Du, Dan Zhao, Bo Zhu, Miao Yu, Hongwei Zhao
Format: Article
Language:English
Published: Nature Publishing Group 2017-08-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-017-09411-x