Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate
Brain-inspired artificial synaptic devices and neurons have the potential for application in future neuromorphic computing as they consume low energy. In this study, the memristive switching characteristics of a nitride-based device with two amorphous layers (SiN/BN) is investigated. We demonstrate...
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doaj-4c08e1cfb1fb4809bc0c7dfd2b9871972020-11-25T03:51:00ZengMDPI AGNanomaterials2079-49912020-05-011099499410.3390/nano10050994Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si SubstrateMehr Khalid Rahmani0Min-Hwi Kim1Fayyaz Hussain2Yawar Abbas3Muhammad Ismail4Kyungho Hong5Chandreswar Mahata6Changhwan Choi7Byung-Gook Park8Sungjun Kim9School of Electronics Engineering, Chungbuk National University, Cheongju 28644, KoreaInter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, KoreaMaterials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, Multan 60800, PakistanDepartment of Physics, Khalifa University, Abu Dhabi 127788, UAESchool of Electronics Engineering, Chungbuk National University, Cheongju 28644, KoreaInter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, KoreaSchool of Electronics Engineering, Chungbuk National University, Cheongju 28644, KoreaDivision of Materials Science and Engineering, Hanyang University, Seoul 04763, KoreaInter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaBrain-inspired artificial synaptic devices and neurons have the potential for application in future neuromorphic computing as they consume low energy. In this study, the memristive switching characteristics of a nitride-based device with two amorphous layers (SiN/BN) is investigated. We demonstrate the coexistence of filamentary (abrupt) and interface (homogeneous) switching of Ni/SiN/BN/n<sup>++</sup>-Si devices. A better gradual conductance modulation is achieved for interface-type switching as compared with filamentary switching for an artificial synaptic device using appropriate voltage pulse stimulations. The improved classification accuracy for the interface switching (85.6%) is confirmed and compared to the accuracy of the filamentary switching mode (75.1%) by a three-layer neural network (784 × 128 × 10). Furthermore, the spike-timing-dependent plasticity characteristics of the synaptic device are also demonstrated. The results indicate the possibility of achieving an artificial synapse with a bilayer SiN/BN structure.https://www.mdpi.com/2079-4991/10/5/994memristorsilicon nitrideboron nitrideneuromorphic computingresistive switching |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Mehr Khalid Rahmani Min-Hwi Kim Fayyaz Hussain Yawar Abbas Muhammad Ismail Kyungho Hong Chandreswar Mahata Changhwan Choi Byung-Gook Park Sungjun Kim |
spellingShingle |
Mehr Khalid Rahmani Min-Hwi Kim Fayyaz Hussain Yawar Abbas Muhammad Ismail Kyungho Hong Chandreswar Mahata Changhwan Choi Byung-Gook Park Sungjun Kim Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate Nanomaterials memristor silicon nitride boron nitride neuromorphic computing resistive switching |
author_facet |
Mehr Khalid Rahmani Min-Hwi Kim Fayyaz Hussain Yawar Abbas Muhammad Ismail Kyungho Hong Chandreswar Mahata Changhwan Choi Byung-Gook Park Sungjun Kim |
author_sort |
Mehr Khalid Rahmani |
title |
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate |
title_short |
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate |
title_full |
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate |
title_fullStr |
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate |
title_full_unstemmed |
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate |
title_sort |
memristive and synaptic characteristics of nitride-based heterostructures on si substrate |
publisher |
MDPI AG |
series |
Nanomaterials |
issn |
2079-4991 |
publishDate |
2020-05-01 |
description |
Brain-inspired artificial synaptic devices and neurons have the potential for application in future neuromorphic computing as they consume low energy. In this study, the memristive switching characteristics of a nitride-based device with two amorphous layers (SiN/BN) is investigated. We demonstrate the coexistence of filamentary (abrupt) and interface (homogeneous) switching of Ni/SiN/BN/n<sup>++</sup>-Si devices. A better gradual conductance modulation is achieved for interface-type switching as compared with filamentary switching for an artificial synaptic device using appropriate voltage pulse stimulations. The improved classification accuracy for the interface switching (85.6%) is confirmed and compared to the accuracy of the filamentary switching mode (75.1%) by a three-layer neural network (784 × 128 × 10). Furthermore, the spike-timing-dependent plasticity characteristics of the synaptic device are also demonstrated. The results indicate the possibility of achieving an artificial synapse with a bilayer SiN/BN structure. |
topic |
memristor silicon nitride boron nitride neuromorphic computing resistive switching |
url |
https://www.mdpi.com/2079-4991/10/5/994 |
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