Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate

Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate

Brain-inspired artificial synaptic devices and neurons have the potential for application in future neuromorphic computing as they consume low energy. In this study, the memristive switching characteristics of a nitride-based device with two amorphous layers (SiN/BN) is investigated. We demonstrate...

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Bibliographic Details
Main Authors: Mehr Khalid Rahmani, Min-Hwi Kim, Fayyaz Hussain, Yawar Abbas, Muhammad Ismail, Kyungho Hong, Chandreswar Mahata, Changhwan Choi, Byung-Gook Park, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Nanomaterials
Subjects:
memristor
silicon nitride
boron nitride
neuromorphic computing
resistive switching
Online Access:https://www.mdpi.com/2079-4991/10/5/994

Internet

https://www.mdpi.com/2079-4991/10/5/994

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