Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy
The switching mechanism of valence change resistive memory devices is widely accepted to be an ionic movement of oxygen vacancies resulting in a valence change of the metal cations. However, direct experimental proofs of valence changes in memristive devices are scarce. In this work, we have employe...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-04-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5026063 |