Electronic structure of B-doped diamond: A first-principles study
Electronic structure of B-doped diamond is studied based on first-principles calculations with supercell models for substitutional and interstitial doping at 1.5–3.1 at.% B concentrations. Substitutional doping induces holes around the valence-band maximum in a rigid-band fashion. The nearest neighb...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2006-01-01
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| Series: | Science and Technology of Advanced Materials |
| Online Access: | http://www.iop.org/EJ/abstract/-search=58672466.10/1468-6996/7/S1/A15 |