Effect of process pressure and temperature on ZnON material properties in reactive sputtering
We have systematically studied Zinc Oxynitride (ZnON) materials for thin film transistors in advanced display applications. The ZnON materials were deposited using a reactive sputtering process with a metallic Zn target in a gas mixture of Ar, N2 and O2. We pr...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4978771 |