Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser

Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser

An optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si) films from amorphous layers applicable in the solar cell production is analyzed in the paper. In the computational simulations, the influence of basic characteristic parameters of the experimental proc...

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Main Authors: R. Černý, A. Kalbáč
Format: Article
Language:English
Published: CTU Central Library 2000-01-01
Series:Acta Polytechnica
Online Access:https://ojs.cvut.cz/ojs/index.php/ap/article/view/38
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spelling doaj-49fb80193fff4e64ae9a0ded65ffa6a32020-11-24T22:05:39ZengCTU Central LibraryActa Polytechnica1210-27091805-23632000-01-0140238Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning LaserR. ČernýA. KalbáčAn optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si) films from amorphous layers applicable in the solar cell production is analyzed in the paper. In the computational simulations, the influence of basic characteristic parameters of the experimental procedure on the mechanisms of pc-Si lateral growth is studied. Among these parameters, the energy density of the applied laser and the thickness of the amorphous silicon (a-Si) layer are identified as the most significant. As an optimum solution, the mechanism of pc-Si growth consisting in repeated melting of a part of already crystallized pc-Si layer by the scanning laser is proposed.https://ojs.cvut.cz/ojs/index.php/ap/article/view/38
collection DOAJ
language English
format Article
sources DOAJ
author R. Černý
A. Kalbáč
spellingShingle R. Černý
A. Kalbáč
Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser
Acta Polytechnica
author_facet R. Černý
A. Kalbáč
author_sort R. Černý
title Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser
title_short Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser
title_full Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser
title_fullStr Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser
title_full_unstemmed Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser
title_sort modeling the crystallization of amorphous silicon thin films using a high repetition rate scanning laser
publisher CTU Central Library
series Acta Polytechnica
issn 1210-2709
1805-2363
publishDate 2000-01-01
description An optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si) films from amorphous layers applicable in the solar cell production is analyzed in the paper. In the computational simulations, the influence of basic characteristic parameters of the experimental procedure on the mechanisms of pc-Si lateral growth is studied. Among these parameters, the energy density of the applied laser and the thickness of the amorphous silicon (a-Si) layer are identified as the most significant. As an optimum solution, the mechanism of pc-Si growth consisting in repeated melting of a part of already crystallized pc-Si layer by the scanning laser is proposed.
url https://ojs.cvut.cz/ojs/index.php/ap/article/view/38
work_keys_str_mv AT rcerny modelingthecrystallizationofamorphoussiliconthinfilmsusingahighrepetitionratescanninglaser
AT akalbac modelingthecrystallizationofamorphoussiliconthinfilmsusingahighrepetitionratescanninglaser
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