Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance

Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance

Optical spectra of light reflection are detected under an influence of ultrasonic wave (UW)on a GaAs wafer. The differential spectrum is calculated as a difference between those taken under UW and without that influence on a sample. This acousto-optic differential reflectance(AODR) spectrum contains...

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Bibliographic Details
Main Authors: O. G. Ibarra-Manzano, R. Castro-Sánchez, G. Cerda-Villicaña, J. G. Aviña-Cervantes, J. González-Barbosa, J. Estudillo-Ayala, R. Rojas-Laguna, J.A. Andrade-Lucio, E. Alvarado-Méndez, L. A. Aguilera-Cortés, R. Guzmán-Cabrera, Svetlana V. Koshevaya, Gennadiy N. Burlak, Igor Ostrovskii, M. Torres-Cisneros
Format: Article
Language:Spanish
Published: Universidad de Guanajuato 2012-02-01
Series:Acta Universitaria
Subjects:
Semiconductors
Optical refl ectance
Shallow levels.
Online Access:http://www.actauniversitaria.ugto.mx/index.php/acta/article/view/211

Internet

http://www.actauniversitaria.ugto.mx/index.php/acta/article/view/211

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