An Improved 4H-SiC MESFET with a Partially Low Doped Channel

An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a part...

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Main Authors:	Hujun Jia, Yibo Tong, Tao Li, Shunwei Zhu, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang
Format:	Article
Language:	English
Published:	MDPI AG 2019-08-01
Series:	Micromachines
Subjects:	4H-SiC MESFET simulation PAE
Online Access:	https://www.mdpi.com/2072-666X/10/9/555

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record_format	Article
spelling	doaj-494a00280838495d8c43d60d2f66bf8e2020-11-25T02:23:44ZengMDPI AGMicromachines2072-666X2019-08-0110955510.3390/mi10090555mi10090555An Improved 4H-SiC MESFET with a Partially Low Doped ChannelHujun Jia0Yibo Tong1Tao Li2Shunwei Zhu3Yuan Liang4Xingyu Wang5Tonghui Zeng6Yintang Yang7School of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaAn improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a partially low doped channel (PLDC) under the gate, which increases the PAE of the device by decreasing the absolute value of the threshold voltage (<i>V</i><sub>t</sub>), gate-source capacitance (<i>C</i><sub>gs</sub>) and saturation current (<i>I</i><sub>d</sub>). The simulated results show that with the increase of <i>H</i>, the PAE of the device increases and then decreases when the value of <i>N</i><sub>PLDC</sub> is low enough. The doping concentration and thickness of the PLDC are respectively optimized to be <i>N</i><sub>PLDC</sub> = 1 × 10<sup>15</sup> cm<sup>−3</sup> and <i>H</i> = 0.15 μm to obtain the best PAE. The maximum PAE obtained from the PLDC-MESFET is 43.67%, while the PAE of the DR-MESFET is 23.43%; the optimized PAE is increased by 86.38%.https://www.mdpi.com/2072-666X/10/9/5554H-SiCMESFETsimulationPAE
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Hujun Jia Yibo Tong Tao Li Shunwei Zhu Yuan Liang Xingyu Wang Tonghui Zeng Yintang Yang
spellingShingle	Hujun Jia Yibo Tong Tao Li Shunwei Zhu Yuan Liang Xingyu Wang Tonghui Zeng Yintang Yang An Improved 4H-SiC MESFET with a Partially Low Doped Channel Micromachines 4H-SiC MESFET simulation PAE
author_facet	Hujun Jia Yibo Tong Tao Li Shunwei Zhu Yuan Liang Xingyu Wang Tonghui Zeng Yintang Yang
author_sort	Hujun Jia
title	An Improved 4H-SiC MESFET with a Partially Low Doped Channel
title_short	An Improved 4H-SiC MESFET with a Partially Low Doped Channel
title_full	An Improved 4H-SiC MESFET with a Partially Low Doped Channel
title_fullStr	An Improved 4H-SiC MESFET with a Partially Low Doped Channel
title_full_unstemmed	An Improved 4H-SiC MESFET with a Partially Low Doped Channel
title_sort	improved 4h-sic mesfet with a partially low doped channel
publisher	MDPI AG
series	Micromachines
issn	2072-666X
publishDate	2019-08-01
description	An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a partially low doped channel (PLDC) under the gate, which increases the PAE of the device by decreasing the absolute value of the threshold voltage (<i>V</i><sub>t</sub>), gate-source capacitance (<i>C</i><sub>gs</sub>) and saturation current (<i>I</i><sub>d</sub>). The simulated results show that with the increase of <i>H</i>, the PAE of the device increases and then decreases when the value of <i>N</i><sub>PLDC</sub> is low enough. The doping concentration and thickness of the PLDC are respectively optimized to be <i>N</i><sub>PLDC</sub> = 1 × 10<sup>15</sup> cm<sup>−3</sup> and <i>H</i> = 0.15 μm to obtain the best PAE. The maximum PAE obtained from the PLDC-MESFET is 43.67%, while the PAE of the DR-MESFET is 23.43%; the optimized PAE is increased by 86.38%.
topic	4H-SiC MESFET simulation PAE
url	https://www.mdpi.com/2072-666X/10/9/555
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An Improved 4H-SiC MESFET with a Partially Low Doped Channel

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