Gas identification based on bias induced hysteresis of a gas-sensitive SiC field effect transistor
In this work dynamic variation of gate bias is used on a gas-sensitive SiC field effect transistor ("GasFET") to optimize its sensitivity and increase its selectivity. Gate bias ramps introduce strong hysteresis in the sensor signal. The shape of this hysteresis is shown to be an appropria...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Copernicus Publications
2014-01-01
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| Series: | Journal of Sensors and Sensor Systems |
| Online Access: | http://www.j-sens-sens-syst.net/3/9/2014/jsss-3-9-2014.pdf |