A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and co...

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Bibliographic Details
Main Authors: Qingyi Kong, Mingxing Du, Ziwei Ouyang, Kexin Wei, William Gerard Hurley
Format: Article
Language:English
Published: MDPI AG 2019-03-01
Series:Energies
Subjects:
IGBT module
on-state voltage
separation method
model
Online Access:http://www.mdpi.com/1996-1073/12/5/851

Internet

http://www.mdpi.com/1996-1073/12/5/851

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