Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications

Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications

Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 μm adopted, the device exhibited a high output power density...

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Bibliographic Details
Main Authors: Y. C. Lin, S. H. Chen, P. H. Lee, K. H. Lai, T. J. Huang, Edward Y. Chang, Heng-Tung Hsu
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Micromachines
Subjects:
high-electron-mobility transistors
copper metallization
millimeter wave
Online Access:https://www.mdpi.com/2072-666X/11/2/222

Internet

https://www.mdpi.com/2072-666X/11/2/222

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