Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior

Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior

The utilization of bipolar-type memristive devices for the realization of synaptic connectivity in neural networks strongly depends on the ability of the devices for analog conductance modulation under application of electrical stimuli in the form of identical voltage pulses. Typically, filamentary...

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Bibliographic Details
Main Authors:	F. Cüppers, S. Menzel, C. Bengel, A. Hardtdegen, M. von Witzleben, U. Böttger, R. Waser, S. Hoffmann-Eifert
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2019-09-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.5108654

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