Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior
The utilization of bipolar-type memristive devices for the realization of synaptic connectivity in neural networks strongly depends on the ability of the devices for analog conductance modulation under application of electrical stimuli in the form of identical voltage pulses. Typically, filamentary...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5108654 |