High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

Abstract The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f max, cutoff frequency f T, ratio f max/f T, forward transmission coefficient S 21, and open-circuit voltage gain A v. All these figures of merit...

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Bibliographic Details
Main Authors: Erica Guerriero, Paolo Pedrinazzi, Aida Mansouri, Omid Habibpour, Michael Winters, Niklas Rorsman, Ashkan Behnam, Enrique A. Carrion, Amaia Pesquera, Alba Centeno, Amaia Zurutuza, Eric Pop, Herbert Zirath, Roman Sordan
Format: Article
Language:English
Published: Nature Publishing Group 2017-05-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-017-02541-2

Internet

https://doi.org/10.1038/s41598-017-02541-2

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