Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs
Mechanical stress is demonstrated in the fabrication process of nanosheet FETs. In particular, unwanted mechanical instability stemming from gravity during channel-release is covered in detail by aid of 3-D simulations. The simulation results show the physical weakness of suspended nanosheets and th...
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MDPI AG
2021-06-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/12/1395 |
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doaj-47f6129bee0140469671f4d7225160172021-06-30T23:48:19ZengMDPI AGElectronics2079-92922021-06-01101395139510.3390/electronics10121395Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETsKhwang-Sun Lee0Jun-Young Park1School of Electronics Engineering, Chungbuk National University, Chungdae-ro 1, Cheongju 28644, KoreaSchool of Electronics Engineering, Chungbuk National University, Chungdae-ro 1, Cheongju 28644, KoreaMechanical stress is demonstrated in the fabrication process of nanosheet FETs. In particular, unwanted mechanical instability stemming from gravity during channel-release is covered in detail by aid of 3-D simulations. The simulation results show the physical weakness of suspended nanosheets and the impact of nanosheet thickness. Inner spacer engineering based on geometry and elastic property are suggested for better mechanical stability. The formation of wide contact area between inner spacer and nanosheet, as well as applying rigid spacer dielectric material, are preferred.https://www.mdpi.com/2079-9292/10/12/1395gate-all-aroundgravityinner spacermechanical displacementYoung’s modulusreliability |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Khwang-Sun Lee Jun-Young Park |
| spellingShingle |
Khwang-Sun Lee Jun-Young Park Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs Electronics gate-all-around gravity inner spacer mechanical displacement Young’s modulus reliability |
| author_facet |
Khwang-Sun Lee Jun-Young Park |
| author_sort |
Khwang-Sun Lee |
| title |
Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs |
| title_short |
Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs |
| title_full |
Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs |
| title_fullStr |
Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs |
| title_full_unstemmed |
Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs |
| title_sort |
inner spacer engineering to improve mechanical stability in channel-release process of nanosheet fets |
| publisher |
MDPI AG |
| series |
Electronics |
| issn |
2079-9292 |
| publishDate |
2021-06-01 |
| description |
Mechanical stress is demonstrated in the fabrication process of nanosheet FETs. In particular, unwanted mechanical instability stemming from gravity during channel-release is covered in detail by aid of 3-D simulations. The simulation results show the physical weakness of suspended nanosheets and the impact of nanosheet thickness. Inner spacer engineering based on geometry and elastic property are suggested for better mechanical stability. The formation of wide contact area between inner spacer and nanosheet, as well as applying rigid spacer dielectric material, are preferred. |
| topic |
gate-all-around gravity inner spacer mechanical displacement Young’s modulus reliability |
| url |
https://www.mdpi.com/2079-9292/10/12/1395 |
| work_keys_str_mv |
AT khwangsunlee innerspacerengineeringtoimprovemechanicalstabilityinchannelreleaseprocessofnanosheetfets AT junyoungpark innerspacerengineeringtoimprovemechanicalstabilityinchannelreleaseprocessofnanosheetfets |
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1721350426942504960 |