Simulation of polarization dynamics in semi-insulating, Cr-compensated GaAs pixelated sensors under high x-ray fluxes

We developed a numerical solver for the drift–diffusion and Poisson equations in one-dimensional semiconductor detectors, including the possibility of an arbitrary number of donors and acceptors acting as trapping centers, Schottky or Ohmic contact type, velocity saturation at high electric fields,...

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Bibliographic Details
Main Author: P. Zambon
Format: Article
Language:English
Published: AIP Publishing LLC 2021-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0055782